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 Ordering number:ENN6313
N-Channel Silicon MOSFET
2SK2911
Ultrahigh-Speed Switching Applications
Features
* Low ON-resistance. * Ultrahigh-speed switching. * 2.5V drive.
Package Dimensions
unit:mm 2091A
[2SK2911]
0.5
0.4 3 0.16 0 to 0.1
1 0.95 0.95 2 1.9 2.9
0.8 1.1
0.5
1.5 2.5
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions
1 : Gate 2 : Source 3 : Drain SANYO : CP
Ratings 100 10 0.25 1 0.25 150 -55 to +150
Unit V V A A W C C
Electrical Characteristics at Ta = 25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=1mA, VGS=0 VDS=100V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=150mA ID=0.15A, VGS=4V ID=0.1A, VGS=2.5V Conditions Ratings min 100 100 10 0.5 250 500 2.5 3.0 3.5 4.2 1.5 typ max Unit V A A V mS
Marking : FK
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52501TS KT TA-2137 No.6313-1/4
2SK2911
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf VSD VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=250mA, VGS=0 Conditions Ratings min typ 50 15 4 15 10 25 35 0.8 1.2 max Unit pF pF pF ns ns ns ns V
Switching Time Test Circuit
4V 0V VIN VDD=50V ID=0.15A RL=333 D VOUT
VIN PW=10s D.C.1%
G
2SK2911 P.G 50 S
0.30
ID - VDS
8.0V 6.0V 4.0V
0.50 0.45 0.40
ID - VGS
VDS=10V
0.25
V 2.5
Drain Current, ID - A
0.20
1
0 0.
Drain Current, ID - A
V
3.0V
0.35 0.30 0.25 0.20
0.15
VGS=1.5V
75
0.2 0.4 0.6 0.8 1.0 1.2
0.15 0.10 0.05
C
0.10
0 0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 0
Ta
1.4 1.6
=-
0.05
25
C
1.8
25 C
2.0
Drain-to-Source Voltage, VDS - V
3
Gate-to-Source Voltage, VGS - V
5.0 4.5
| yf s | - I D
VDS=10V
R DS(on) - VGS
Ta=25C ID=0.15A 0.1A
Forward Transfer Admittance, | yfs | - S
2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.01
25C Ta=25C 75C
Static Drain-to-Source On-State Resistance, RDS(on) - m
5 7
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2
2
3
5
7
0.1
2
3
3
4
5
6
7
8
9
10
Drain Current, ID - A
Gate-to-Source Voltage, VGS - V
No.6313-2/4
2SK2911
6
R DS(on) - Ta
1.0 7 5 3
I F - VSD
VGS= 0
Static Drain-to-Source On-State Resistance, RDS(on) - m
5
4
0. I D=
1A
,
=4V V GS
, =4V V GS
Forward Current, IF - A
2 0.1 7 5 3 2
3
0. I D=
15A
2
1
3 2
0 -60
-40
-20
0
20
40
60
80
100
120
140
160
0.001 0
0.1
0.2
0.3
0.4
0.5
25 C Ta=25C
0.6 0.7 0.8
75C
0.01 7 5
0.9
1.0
Ambient Temperature, Ta - C
1000 7 5 3 2
Diode Forward Voltage, VSD - V f = 1MHz
1000 7 5
Ciss,Coss,Crss - VDS
SW Time - I D
VDD =50V VGS=4V
tf
Switching Time, SW Time - ns
Ciss, Coss, Crss - pF
3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 0.01 2
100 7 5 3 2 10 7 5 3 2 1.0 0 5 10 15 20 25
Ciss
td (of f)
td(on)
tr
Coss
Crss
30
3
5
7
0.1
2
3
Drain-to-Source Voltage, VDS - V
Drain Current, ID - A
0.28
ASO
2 1.0 7 5
PD M ou nt
Ta
Allowable Power Dissipation, PD - W
IDP=1A
10s
100s
1m s
0.25 0.24
ed
Drain Current, ID - A
3 2 0.1 7 5 3 2 0.01 7 5 3 2
ID=0.25A
D C
on
0.20
ag
10 m s
io n
las
se
0.16
po
xy
bo
Operation in this area is limited by RDS(on). Ta=25C Single pulse
0.001 0.01 2 3
Mounted on a glass epoxy board (10mmx10mmx0.8mm)
5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 7 100 2
Drain-to-Source Voltage, VDS - V
op er at
ar
0.12
d
(1
0m
0.08
m x1 0
m
0.04
m x0 .8 m m )
140 160
0
0
20
40
60
80
100
120
Ambient Temperature, Ta - C
No.6313-3/4
2SK2911
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of May, 2001. Specifications and information herein are subject to change without notice.
PS No.6313-4/4


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